Infineon ISC0702NLSATMA1
$ 0.704
Production
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-04-22
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
描述
由其分销商提供的 Infineon ISC0702NLSATMA1 的描述。
Power MOSFET, N Channel, 60 V, 135 A, 0.0023 ohm, TDSON, Surface Mount
Infineon N-Ch MOSFET OptiMOS 5, Vds=60V 135A SuperSO8 5x6 SMD 8-Pin
60 V 23 A 3W Surface Mount N-Channel OptiMOSTM5 Power-Transistor - PG-TDSON-8
Trans MOSFET N-CH 60V 23A 8-Pin TDSON EP T/R
Power Field-Effect Transistor, 135A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon ISC0702NLSATMA1 MOSFET
RS APAC
场效应管, MOSFET, N沟道, 60V, 135A, TDSON;
MOSFET N-CH 60V 23A/135A TDSON-8
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Contact PlatingTin
Number of Terminals8
Technical
Continuous Drain Current (ID)135 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.8 mΩ
Drain to Source Voltage (Vds)60 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3 W
Turn-Off Delay Time7.5 ns
Turn-On Delay Time6.5 ns
Dimensions
Height1 mm