Infineon ISC0603NLSATMA1

Mosfet, N-Ch, 80V, 56A, Tdson Rohs Compliant: Yes |Infineon Technologies ISC0603NLSATMA1

Power MOSFET, N Channel, 80 V, 56 A, 0.0085 ohm, TDSON, Surface Mount

MOSFET, N-CH, 80V, 56A, TDSON; Available until stocks are exhausted

Power Field-Effect Transistor, 56A I(D), 80V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Infineon NChannelMOSTube OptiMOS 5series, Vds=80 V, 56 A, SuperSO8 5 x 6encapsulation, surface mount, 8Pin

场效应管, MOSFET, N沟道, 80V, 56A, TDSON;

1 mm 2.5 W 1 4.8 ns 12 ns 150 °C -55 °C 8.5 mΩ

MOSFET N-CH 80V 12.3A/56A TDSON

OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. ISC0603NLS in the SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.