Infineon ISC0602NLSATMA1
$ 0.643
EOL
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-04-22
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
描述
由其分销商提供的 Infineon ISC0602NLSATMA1 的描述。
N-Channel 80 V 14 A 2.5 W Surface Mount Metal Oxide Mosfet - PG-TDSON-8-6
Power MOSFET, N Channel, 80 V, 66 A, 0.0071 ohm, TDSON, Surface Mount
Power Field-Effect Transistor, 66A I(D), 80V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon ISC0602NLSATMA1 MOSFET
Infineon NChannelMOSTube OptiMOS 5series, Vds=80 V, 66 A, SuperSO8 5 x 6encapsulation, surface mount, 8Pin
场效应管, MOSFET, N沟道, 80V, 66A, TDSON;
MOSFET N-CH 80V 14A/66A TDSON-8
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. ISC0602NLS in the SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Contact PlatingTin
Number of Terminals8
Technical
Continuous Drain Current (ID)66 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance7.3 mΩ
Drain to Source Voltage (Vds)80 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Turn-Off Delay Time13 ns
Turn-On Delay Time5.4 ns
Dimensions
Height1 mm