Infineon ISC027N10NM6ATMA1

Mosfet, n-Ch,100V, tdson-8 Rohs Compliant: Yes |Infineon Technologies ISC027N10NM6ATMA1

Single N-Channel 100 V 2.7 mOhm 72.5 nC OptiMOS Power Mosfet - PG-TDSON-8 FL

Transistor MOSFET 100V 8-Pin SuperSO

Trans MOSFET N-CH 100V 23A 8-Pin TDSON EP T/R

Power Field-Effect Transistor, 192A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET, N-CH, 100V, 192A, TDSON-FL;

场效应管, MOSFET, N沟道, 100V, TDSON-8;

Infineon NMOSFET, Vds=100 V, 192 A, TDSON, , 8

ISC027N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete power MOSFETs. Infineon’s latest OptiMOS™ 6 MOSFET technology at 100 V utilizes a proprietary trench technology that enables higher power density, efficiency and ruggedness. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.Infineon’s OptiMOS™ 6 industrial power MOSFET 100 V is designed for high switching frequency application such as telecom and server power supply, but also the ideal choice for other applications such as solar, power tools and drones.In SuperSO8 package it achieves ~20% improvements in on-state resistance (RDS(on)) and 30% better figure of merits (FOM - RDS(on) x Qg and Qgd) compared to the previous technology OptiMOS™ 5. This enables designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.