Infineon ISC011N06LM5ATMA1

Power MOSFET, N Channel, 60 V, 288 A, 1.15 Milliohms, TDSON-FL, 8 Pins, Surface Mount

Trans MOSFET N-CH 60V 37A 8-Pin TDSON EP T/R

Power Field-Effect Transistor, 288A I(D), 60V, 0.00115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Infineon NChannel EnhancedMOSTube ISCseries, Vds=60 V, 288 A, SuperSO8 5 x 6encapsulation, surface mount, 8Pin

MOSFET, N-CH, 60V, 288A, TDSON;

60V, 295A, 1.15MOHM, N-CHANNEL, SuperSO8 FL

The ISC011N06LM5, Infineon's OptiMOS™ MOSFET in the SuperSO8 package extends the OptiMOS™ 5 and 3 product portfolio and enables higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.