Infineon ISC007N04NM6ATMA1

Name: Infineon ISC007N04NM6ATMA1
Brand: Infineon
SKU: ISC007N04NM6ATMA1

Mosfet, n-Ch, 40V, 381A, tdson-Fl Rohs Compliant: Yes |Infineon Technologies ISC007N04NM6ATMA1

$ 1.25

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Distributor		SKU		Min	Pkg
Newark		ISC007N04NM6ATMA1	3,332	1	Cut Tape	1.220	1.220	1.220	1.220	1.220
Arrow Electronics		ISC007N04NM6ATMA1	4,064	1		3.082	3.082	3.082	3.082	3.082
Rochester Electronics		ISC007N04NM6ATMA1	4,744					1.420	1.180	1.050	8h
DigiKey	3	448-ISC007N04NM6ATMA1CT-ND	8,948	1	Cut Tape	3.540	2.304	1.602	1.281	1.281
Avnet		ISC007N04NM6ATMA1	0	5K						1.131	1d

数据表和文档

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库存历史记录

3 个月趋势:

-35.04%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-01-18

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

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Mosfet, n-Ch,40V,381A, tdson-Fl Rohs Compliant: Yes |Infineon Technologies ISC007N04NM6ATMA1

Newark

Power MOSFET, N Channel, 40 V, 381 A, 0.0006 ohm, TDSON-FL, Surface Mount

Avnet

Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP T/R

Verical

Power Field-Effect Transistor, 381A I(D), 40V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Infineon NMOS ISC007N04NM6, Vds=40 V, 48 A, SuperSO8 5 x 6, , 8

UnikeyIC

With this best-in-class OptiMOSTM 6 power MOSFET 40V normal level, Infineon offers a benchmark solution for normal level (higher threshold voltage) required applications such as battery-powered applications, battery-powered tools, battery management, and low voltage drives. A higher Vth for the normal level portfolio means that only larger gate voltage spikes would cause an unwanted turn-on.In addition, lower QGD/QGS ratios (CGD/CGS divider ratio) reduce the gate voltage spikes' peak, further contributing to the robustness against unwanted turn-on. The ISC007N04NM6 features very low RDS(on) of 0.7mOhm.

Infineon