供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-11-01
Lifecycle StatusObsolete (Last Updated: 2 years ago)
描述
由其分销商提供的 Infineon IRLZ44NL 的描述。
Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A) | MOSFET N-CH 55V 47A TO-262
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:47A; On-Resistance, Rds(on):22mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262; Drain Source On Resistance @ 10V:22mohm RoHS Compliant: No
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)47 A
Current Rating47 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)55 V
Input Capacitance1.7 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Number of Elements1
PackagingBulk
Power Dissipation110 W
Rds On Max22 mΩ
Rise Time84 ns
Voltage Rating (DC)55 V