Infineon IRLZ24NSPBF

Name: Infineon IRLZ24NSPBF
Brand: Infineon
SKU: IRLZ24NSPBF

In a Tube of 50, IRLZ24NSPBF N-Channel MOSFET, 18 A, 55 V HEXFET, 3-Pin D2PAK Infineon

$ 1.79

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLZ24NSPBF	0	1	Bulk	1.990	1.790	1.790	1.790	1.790	7h
Win Source	WS-IRLZ24NSPBF	139	70				0.758	0.506	0.506	15h
Worldway Electronics	IRLZ24NSPBF	10,982	7	Tube		0.077	0.074	0.070	0.070	1d
Anlinkda	IRLZ24NSPBF	57,055			0.243	0.217	0.186	0.182	0.175	2d
Chipsmall Limited	IRLZ24NSPBF	20,000	1		0.681	0.454	0.272	0.227	0.227	1d

数据表和文档

下载 Infineon IRLZ24NSPBF 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

element14 APAC

Newark

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRLZ24NSPBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-09-22

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRLZ24NSPBF 的描述。

In a Tube of 50, IRLZ24NSPBF N-Channel MOSFET, 18 A, 55 V HEXFET, 3-Pin D2PAK Infineon

Fly-Wing Technology

Single N-Channel 55 V 0.06 Ohm 15 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 55V 18A 3-Pin(2+Tab) D2PAK

Avnet

MOSFET, 55V, 18A, 60 MOHM, 10 NC QG, LOGIC LEVEL, D2-PAK

RS (Formerly Allied Electronics)

HEXFET POWER MOSFET Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

Newark

N CHANNEL MOSFET, 55V, 18A, D2-PAK; Tran; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:55V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.8W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:68mJ; Capacitance Ciss Typ:480pF; Current Id Max:18A; Package / Case:D2-PAK; Power Dissipation Pd:3.8W; Power Dissipation Pd:3.8W; Pulse Current Idm:72A; Reverse Recovery Time trr Typ:60ns; SMD Marking:Z24NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V

element14 APAC