Infineon IRLU120NPBF

Name: Infineon IRLU120NPBF
Brand: Infineon
SKU: IRLU120NPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.185 Ohm; Id 10A; I-pak (TO-251AA); Pd 48W

$ 0.303

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
Arrow Electronics	IRLU120NPBF	15	1		0.292	0.292	0.292	0.292	0.292
RS (Formerly Allied Electronics)	IRLU120NPBF	0	5	Bulk		1.380	1.210	1.210	1.210	18h
Future Electronics	IRLU120NPBF	0	75	Tube			0.330	0.315	0.295
Farnell	IRLU120NPBF	0	1		0.415*	0.406*	0.398*	0.398*	0.398*	2h
Verical	IRLU120NPBF	15	5			0.293	0.293	0.293	0.293

数据表和文档

下载 Infineon IRLU120NPBF 的数据表和制造商文档。

Newark

Datasheet12 页11 年前

Datasheet10 页28 年前

IHS

TME

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

-100%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRLU120NPBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1998-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-12-28

LTD Date2013-06-28

描述

由其分销商提供的 Infineon IRLU120NPBF 的描述。

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;I-Pak (TO-251AA);PD 48W

RS (Formerly Allied Electronics)

Single N-Channel 100 V 0.265 Ohm 20 nC HEXFET® Power Mosfet - TO-251AA

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 100 V, 10 A, 0.185 ohm, TO-251AA, Through Hole

Avnet

Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

IHS

MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 48 W

Distrelec

MOSFET, N, 100V, 11A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):185mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:10A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; On State resistance @ Vgs = 10V:185mohm; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:35A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon