Infineon IRLR024ZPBF

Name: Infineon IRLR024ZPBF
Brand: Infineon
SKU: IRLR024ZPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 46 Milliohms; ID 16A; D-Pak (TO-252AA); PD 35W

Obsolete

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLR024ZPBF	0	1650	Bulk					0.470	19h
Farnell	IRLR024ZPBF	0	1		0.915*	0.915*	0.478*	0.403*	0.403*	1d
Win Source	WS-IRLR024ZPBF	20	95				0.634	0.423	0.423	3h
Worldway Electronics	IRLR024ZPBF	6,724	7	Tube		0.157	0.152	0.144	0.144	2h
Aztech	IRLR024ZPBF	11,502			0.970	0.970	0.970	0.970	0.970	23h

数据表和文档

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IHS

Datasheet11 页15 年前

TME

Newark

iiiC

RS (Formerly Allied Electronics)

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-03-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2013-07-17

LTD Date2014-01-17

描述

由其分销商提供的 Infineon IRLR024ZPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 46 Milliohms;ID 16A;D-Pak (TO-252AA);PD 35W

RS (Formerly Allied Electronics)

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package

International Rectifier

MOSFET Operating temperature: -55...+175 °C Housing type: DPAK Polarity: N Power dissipation: 35 W

Distrelec

Trans MOSFET N-CH 55V 16A 3-Pin(2+Tab) DPAK

Avnet

N-LogL 55V 16A 35W 0,058R TO252AA

Schukat

Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:55V; On Resistance Rds(on):58mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:35W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:16A; Package / Case:DPAK; Power Dissipation Pd:35W; Power Dissipation Pd:35W; Pulse Current Idm:64A; SMD Marking:IRLR024Z; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

element14 APAC