描述
由其分销商提供的 Infineon IRLMS2002TR 的描述。
20V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
HEXFET POWER MOSFET Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:6.5A; On Resistance, Rds(on):30mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:Micro6 ;RoHS Compliant: No
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageLSOP
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)6.5 A
Current Rating6.5 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)20 V
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.31 nF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation2 W
Rds On Max30 mΩ
Rise Time11 ns
Voltage Rating (DC)20 V