价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| March Technology | IRLL110PBF | 联系方式 | Box | 5d | ||||||||
| Nexxon Inc. (USA) | IRLL110PBF | 联系方式 | 6d |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
描述
由其分销商提供的 Infineon IRLL110PBF 的描述。
MOSFET TRANSISTOR N CH
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET [IR] IRLL110PBF MOSFET
MOSFET TRANSISTOR N CH; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: -; Power Dissipati
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOT-223
Number of Pins3
Number of Terminals4
Technical
Continuous Drain Current (ID)1.5 A
Current Rating1.5 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance540 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation2 W
Recovery Time130 ns
Voltage Rating (DC)100 V