供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-12-22
Lifecycle StatusEOL (Last Updated: 4 months ago)
LTB Date2026-09-30
LTD Date2027-03-31
相关零件
InfineonIRFL024ZPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 46.2 Milliohms;ID 5.1A;SOT-223;PD 1W;VF 1.3V
Diodes Inc.ZXMP4A16GTA
ZXMP4A16G Series 40 V 0.06 Ohm P-Channel Enhancement Mode MOSFET - SOT-223
描述
由其分销商提供的 Infineon IRLL024ZTRPBF 的描述。
Single N-Channel 55 V 60 mOhm 7 nC HEXFET® Power Mosfet - SOT-223-3
MOSFET, 55V, 5A, 60 MOHM, 7 NC QG, LOGIC LEVEL, SOT-223
Power MOSFET, N Channel, 55 V, 5 A, 0.06 ohm, SOT-223, Surface Mount
Trans MOSFET N-CH 55V 5A 4-Pin (3+Tab) SOT-223 T/R
Power Field-Effect Transistor, 5A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:5A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-223 ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins3
Number of Terminals4
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance380 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Manufacturer Package IdentifierPG-SOT223-4
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.8 W
Rds On Max60 mΩ
Resistance60 MΩ
Rise Time33 ns
Schedule B8541290080
Turn-Off Delay Time20 ns
Turn-On Delay Time8.6 ns
Dimensions
Height1.8 mm
Length6.6802 mm
Width3.7 mm
合规
环境分类
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
合规声明