供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-03-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-02-28
LTD Date2022-08-31
相关零件
InfineonSPP80N03S2L04AKSA1
MOSFET N-CH 30V 80A TO220-3 / N-Channel 30 V 80A (Tc) 188W (Tc) Through Hole PG-TO220-3-1
STMicroelectronicsSTP160N3LL
N-channel 30 V, 2.5 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package
描述
由其分销商提供的 Infineon IRL8114PBF 的描述。
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Compliant Through Hole Lead Free 4.5 mΩ TO-220-3 Production (Last Updated: 2 years ago) 1000
MOSFET, 30V, 90A, 4.5 mOhm, 19 nC Qg, TO-220AB, TUBE
Trans MOSFET N-CH 30V 120A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 90A I(D), 120V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)90 A
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)30 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.66 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation115 W
Min Breakdown Voltage120 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4.5 mΩ
Package Quantity1000
Power Dissipation115 W
Rds On Max4.5 mΩ
Schedule B8541290080