供应链
Country of OriginMainland China, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-08-12
Lifecycle StatusProduction (Last Updated: 1 month ago)
描述
由其分销商提供的 Infineon IRL40SC228 的描述。
40 V Logic Level StrongIRFET™ power MOSFET in D2PAK 7pin, D2PAK7P, RoHS
Infineon SCT
Mosfet, N-Ch, 40V, 360A, To-263 Rohs Compliant: Yes |Infineon Technologies IRL40SC228
Trans MOSFET N-CH 40V 360A 7-pin D2PAK T/R Left 0.8k
Power Field-Effect Transistor, 360A I(D), 40V, 0.00065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
Number of Terminals6
Technical
Continuous Drain Current (ID)360 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance650 µΩ
Drain to Source Voltage (Vdss)40 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation416 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance650 µΩ
Package Quantity800
Power Dissipation416 W
Schedule B8541290080
Turn-Off Delay Time222 ns
Turn-On Delay Time67 ns
Dimensions
Height5.084 mm