供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-19
Lifecycle StatusProduction (Last Updated: 9 months ago)
LTB Date2014-10-25
LTD Date2015-04-25
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描述
由其分销商提供的 Infineon IRL3803LPBF 的描述。
MOSFET N-CH 30V 140A TO262 "N-Channel 30 V 140A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262"
MOSFET, 30V, 140A, 6 MOHM, 93.3 NC QG, LOGIC LEVEL, TO-262
HEXFET POWER MOSFET Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)140 A
Current Rating140 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance600 µΩ
Drain to Source Voltage (Vds)30 V
Fall Time35 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance5 nF
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements1
PackagingBulk
Power Dissipation3.8 W
Rds On Max6 mΩ
Rise Time230 ns
Turn-Off Delay Time29 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)30 V
Dimensions
Height9.65 mm
Length10.668 mm
Width4.826 mm