供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-05-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-30
LTD Date2018-12-31
描述
由其分销商提供的 Infineon IRGS4B60KD1PBF 的描述。
Tube Surface Mount NPT ROHS3Compliant IGBT Transistor 2.5V @ 15V 4A 11A 63W 93ns
Trans IGBT Chip N-CH 600V 11A 63000mW 3-Pin(2+Tab) D2PAK Tube
600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:11A; Collector Emitter Saturation Voltage, Vce(sat):2.50V; Power Dissipation, Pd:63W; Package/Case:D2-PAK; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current11 A
Current Rating11 A
Element ConfigurationSingle
Fall Time89 ns
Max Collector Current11 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation63 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation63 W
Reverse Recovery Time93 ns
Rise Time23 ns
Schedule B8541290080
Turn-Off Delay Time100 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)600 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.652 mm