供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-24
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2022-01-15
LTD Date2022-07-15
描述
由其分销商提供的 Infineon IRGP4062DPBF 的描述。
IRGP4062DPBF Series 600 V 24 A N-Channel UltraFast IGBT - TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-247AC
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W
Igbt, 600V, 48A, To-247Ac-3; Dc Collector Current:48A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:250W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:To-247Ac; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon Technologies IRGP4062DPBF
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.6 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current48 A
Element ConfigurationSingle
Fall Time41 ns
Max Collector Current48 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation250 W
Reverse Recovery Time89 ns
Rise Time31 ns
Schedule B8541290080
Turn-Off Delay Time104 ns
Turn-On Delay Time41 ns
Dimensions
Height24.99 mm
Length15.875 mm
Width5.3 mm
合规
环境分类
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
合规声明