供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-10-19
LTD Date2018-04-19
相关零件
onsemiHGTP7N60A4
Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB
描述
由其分销商提供的 Infineon IRGB4615DPBF 的描述。
Trans IGBT Chip N-CH 600V 23A 99000mW 3-Pin(3+Tab) TO-220AB Tube
Target Applications: Air Conditioner; Pump; Solar; UPS; Washing Machine; Welding
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Weight2.299997 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.55 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current23 A
Element ConfigurationSingle
Max Collector Current23 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation99 W
Min Operating Temperature-40 °C
Power Dissipation99 W
Reverse Recovery Time60 ns
Schedule B8541290080
Turn-Off Delay Time95 ns
Turn-On Delay Time30 ns
Dimensions
Height20.57 mm
Length10.67 mm
Width4.83 mm