Infineon IRGB14C40LPBF

Name: Infineon IRGB14C40LPBF
Brand: Infineon
SKU: IRGB14C40LPBF

IRGB14C40LPBF Series 430 V 14 A N-Channel Ignition IGBT - TO-220AB

$ 3.03

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRGB14C40LPBF	42					1.480	1.230	1.100	15h
RS (Formerly Allied Electronics)		IRGB14C40LPBF	0	1	Bulk	5.480	4.830	4.830	4.830	4.830	4h
Farnell		IRGB14C40LPBF	0	1		3.142*	2.360*	1.915*	1.375*	1.375*	2h
Microchip USA		IRGB14C40LPBF	362	300	Bulk				7.540	7.540	3d
Win Source	2	WS-IRGB14C40LPBF	1,000	22				1.837	1.541	1.541	16h

数据表和文档

下载 Infineon IRGB14C40LPBF 的数据表和制造商文档。

IHS

Datasheet12 页21 年前

_legacy Avnet

Newark

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-10-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2019-10-15

LTD Date2020-04-15

描述

由其分销商提供的 Infineon IRGB14C40LPBF 的描述。

IRGB14C40LPBF Series 430 V 14 A N-Channel Ignition IGBT - TO-220AB

Future Electronics

Trans IGBT Chip N-CH 370V 20A 3-Pin(3+Tab) TO-220AB

Avnet

430V Low-Vceon Discrete IGBT in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT Housing type: TO-220 Collector-emitter breakdown voltage: 430 V Collector-emitter saturation voltage: 1.4 V Power dissipation: 125 W

Distrelec

Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):1.75V; Power Dissipation, Pd:125W; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

IGBT, 430V, 20A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:430V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Clamping Voltage:430V; Current Ic Continuous a Max:20A; Current Temperature:25°C; Device Marking:IRGB14C40LPbF; Fall Time Max:2.8ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-40°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:125W; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Rise Time:2400ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:430V

element14 APAC