供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-04-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-30
LTD Date2018-12-31
相关零件
International RectifierIRG7PH50K10DPBF
Trans IGBT Chip N-CH 1200V 90A 400000mW 3-Pin(3+Tab) TO-247AC Tube
onsemiFGH40T120SMD-F155
IGBT 1200V 80A 555W TO247-3 / Trans IGBT Chip N-CH 1200V 80A 555000mW 3-Pin(3+Tab) TO-247 Tube
LittelfuseIXYH50N120C3D1
IGBT 1200V 90A 625W TO247 / IGBT 1200 V 90 A 625 W Through Hole TO-247 (IXTH)
描述
由其分销商提供的 Infineon IRG7PH42U-EP 的描述。
IRG7PH42U-EP Series 1200 V 90 A Insulated Gate Bipolar Transistor - TO-247AD
Trans IGBT Chip N-CH 1200V 90A 385000mW 3-Pin(3+Tab) TO-247AD Tube
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package
INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel
1200V TRENCH IGBT FOR INDUSTRIAL MODULE, SIZE 4.2 (NO DIODE, EXTENDED LEAD) | Infineon IRG7PH42U-EP
Target Applications: Fan; Pump; Refridgeration; Welding
IRG7PH42 DISCRETE IGBT WITHOUT ANTI-PAR;
IGBT TRENCH 1200V 90A TO-247AD
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)1.2 kV
Element ConfigurationSingle
Fall Time86 ns
Max Collector Current90 A
Max Operating Temperature175 °C
Max Power Dissipation385 W
Min Operating Temperature-55 °C
Power Dissipation385 W
Reverse Recovery Time153 ns
Rise Time41 ns
Turn-Off Delay Time229 ns
Turn-On Delay Time25 ns
Dimensions
Height20.7 mm
Length15.87 mm
Width5.3086 mm