Infineon IRG4RC10SDPBF

Name: Infineon IRG4RC10SDPBF
Brand: Infineon
SKU: IRG4RC10SDPBF

Tube Surface Mount ROHS3Compliant IGBT Transistor 1.8V @ 15V 8A 14A 38W 28ns

$ 0.829

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRG4RC10SDPBF	64					0.999	0.829	0.739	14h
RS (Formerly Allied Electronics)	IRG4RC10SDPBF	0	5	Bulk		6.480	5.830	5.830	5.830	7h
Farnell	IRG4RC10SDPBF	0	1		2.481*	1.895*	1.486*	1.038*	1.038*	14h
Microchip USA	IRG4RC10SDPBF	105	300	Bulk				5.135	5.135	8h
Win Source	WS-IRG4RC10SDPBF	19,194	40				1.191	0.967	0.967	15h

数据表和文档

下载 Infineon IRG4RC10SDPBF 的数据表和制造商文档。

IHS

Datasheet11 页18 年前

Upverter

Newark

iiiC

库存历史记录

3 个月趋势:

+0.00%

供应链

Export Control Classification Number (ECCN) CodeEAR99

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRG4RC10SDPBF 的描述。

Tube Surface Mount ROHS3Compliant IGBT Transistor 1.8V @ 15V 8A 14A 38W 28ns

Fly-Wing Technology

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:14A; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Power Dissipation, Pd:38W; Package/Case:TO-252AA ;RoHS Compliant: Yes

Newark

IGBT, D-PAK 600V 14A; Transistor Type:IGBT; DC Collector Current:14A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:38W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:14A; Fall Time Max:31ns; Package / Case:TO-252; Power Dissipation Max:38W; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulsed Current Icm:18A; Rise Time:31ns; Termination Type:SMD; Transistor Polarity:N Channel

element14 APAC