Infineon IRG4PF50WPBF

Name: Infineon IRG4PF50WPBF
Brand: Infineon
SKU: IRG4PF50WPBF

900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS

$ 11.75

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4PF50WPBF	0	1	Bulk	13.360	11.750	11.750	11.750	11.750	4h
Farnell	2	IRG4PF50W	0	1		19.873*	19.873*	8.501*	8.501*	8.501*	11h
Component Stockers USA		IRG4PF50WPBF	33,902			2.180	2.130	2.070	2.000	2.000	6d
Win Source	2	WS-IRG4PF50W	6,477	1		83.571	55.714	55.714	55.714	55.714	12h
Worldway Electronics	2	IRG4PF50W	15,518	7			21.042	20.398	19.324	19.324	13h

数据表和文档

下载 Infineon IRG4PF50WPBF 的数据表和制造商文档。

IHS

Datasheet9 页22 年前

Datasheet9 页28 年前

DigiKey

RS (Formerly Allied Electronics)

Jameco

iiiC

CAD 模型

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来源	eCAD	mCAD	文件
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EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-05-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-06-30

LTD Date2020-12-31

描述

由其分销商提供的 Infineon IRG4PF50WPBF 的描述。

900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS

Infineon SCT

IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.25 V Current release time: 150 ns Power dissipation: 200 W

Distrelec

IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur

Farnell

MOSFET; Transistor Type:MOSFET; Package/Case:TO-247AC; Power Dissipation, Pd:200W; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:51A; Mounting Type:Through Hole; Voltage Rating:900V ;RoHS Compliant: Yes

Newark

IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WPbF; Fall Time Max:220ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V

element14 APAC