Infineon IRG4BC10SD-SPBF

Name: Infineon IRG4BC10SD-SPBF
Brand: Infineon
SKU: IRG4BC10SD-SPBF

IRG4BC10SD-SPBF, IGBT Transistor, 14 A 600 V, 1kHz, 3-Pin D2PAK

$ 2.605

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRG4BC10SD-SPBF	2,050					1.320	1.100	0.977	21h
RS (Formerly Allied Electronics)		IRG4BC10SD-SPBF	0	350	Bulk				4.110	3.700	14h
Farnell		IRG4BC10SD-SPBF	0	1		0.733*	0.733*	0.733*	0.733*	0.733*	20h
Component Stockers USA		IRG4BC10SD-SPBF	2,462			1.120	1.120	1.050	0.950	0.950	5d
Win Source	2	WS-IRG4BC10SD-S	4,000	10			6.153	4.103	4.103	4.103	22h

数据表和文档

下载 Infineon IRG4BC10SD-SPBF 的数据表和制造商文档。

IHS

Datasheet13 页21 年前

DigiKey

Newark

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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来源	eCAD	mCAD	文件
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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-06-12

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRG4BC10SD-SPBF 的描述。

IRG4BC10SD-SPBF, IGBT Transistor, 14 A 600 V, 1kHz, 3-Pin D2PAK

RS (Formerly Allied Electronics)

Trans IGBT Chip N-CH 600V 14A 38000mW 3-Pin(2+Tab) D2PAK Tube

Verical

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) | IGBT 600V 14A 38W D2PAK

Win Source

STANDARD SPEED COPACK INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel

ComSIT Distribution GmbH

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:14A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:38W; Package/Case:D2PAK ;RoHS Compliant: Yes

Newark

IGBT, D2-PAK; DC Collector Current:14A; Collector Emitter Saturation Voltage Vce(on):1.58V; Power Dissipation Pd:38W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Te

element14 APAC

IGBT, D2-PAK; Transistor Type:IGBT; Transistor Polarity:N; Current Ic Continuous a Max:14A; Voltage, Vce Sat Max:1.8V; Power Dissipation:38W; Case Style:D2-PAK; Termination Type:SMD; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; No. of Pins:3; Power, Pd:38W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:1080ns; Time, Rise:36ns; Transistors, No. of:1

Farnell