Infineon IRFU4615PBF

Name: Infineon IRFU4615PBF
Brand: Infineon
SKU: IRFU4615PBF

Single N-Channel 150 V 42 mOhm 26 nC HEXFET® Power Mosfet - IPAK

$ 1.213

Obsolete

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价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRFU4615PBF	5,410	1		1.919	1.919	1.796	1.570	1.508
Rochester Electronics		IRFU4615PBF	4,950					1.030	0.855	0.762	2h
RS (Formerly Allied Electronics)		IRFU4615PBF	0	3K	Bulk					2.500	4h
Farnell		IRFU4615PBF	71	1		2.505*	2.452*	2.452*	2.452*	2.452*	2h
Verical	3	IRFU4615PBF	1,800	292					1.069	0.953

数据表和文档

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Newark

Datasheet12 页13 年前

IHS

Future Electronics

库存历史记录

3 个月趋势:

-31.91%

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-12-18

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

描述

由其分销商提供的 Infineon IRFU4615PBF 的描述。

Single N-Channel 150 V 42 mOhm 26 nC HEXFET® Power Mosfet - IPAK

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 150V 33A 3-Pin(3+Tab) IPAK Bulk/Tube

Verical

HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

ComSIT Distribution GmbH

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

MOSFET, N-CH 150V 33A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33mA; Package / Case:IPAK; Power Dissipation Pd:144W; Power Dissipation Pd:144W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

element14 APAC