Infineon IRFU13N20DPBF

Name: Infineon IRFU13N20DPBF
Brand: Infineon
SKU: IRFU13N20DPBF

Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - IPAK

$ 1.57

Obsolete

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRFU13N20DPBF	0	10	Bulk		1.740	1.570	1.570	1.570	4h
Farnell		IRFU13N20DPBF..	0	1		2.195*	2.195*	0.777*	0.614*	0.614*	11h
Win Source	2	WS-IRFU13N20D	12	2			25.714	22.286	22.286	22.286	12h
Worldway Electronics	2	IRFU13N20DPBF	19,074	7	Tube		0.264	0.256	0.243	0.243	1d
Anlinkda	2	IRFU13N20DPBF	57,276			1.444	1.294	1.176	1.135	1.114	1d

数据表和文档

下载 Infineon IRFU13N20DPBF 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

Datasheet12 页21 年前

Farnell

Newark

DigiKey

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-11-19

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-10-31

LTD Date2021-04-30

描述

由其分销商提供的 Infineon IRFU13N20DPBF 的描述。

Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - IPAK

Future Electronics

200V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):235mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes

Newark

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Infineon