供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-04-28
Lifecycle StatusProduction (Last Updated: 5 months ago)
相关零件
InfineonIRFS7437-7PPBF
Trans MOSFET N-CH Si 40V 295A 7-Pin(6+Tab) D2PAK Tube / MOSFET N CH 40V 195A D2PAK-7PIN
描述
由其分销商提供的 Infineon IRFS7437TRL7PP 的描述。
Single N-Channel 40 V 1.4 mOhm 150 nC HEXFET® Power Mosfet - D2PAK-7
40V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
Infineon SCT
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 231 W
T&R / MOSFET, 40V, 195A, 1.4 mOhm, 150 nC Qg, D2-7pin
Trans MOSFET N-CH 40V 295A 7-Pin(6+Tab) D2PAK T/R
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
MOSFET, N-CH, 40V, 195A, 7-D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:231W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-263-8
MountSurface Mount
Number of Pins7
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.1 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time51 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.437 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation231 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.4 mΩ
Package Quantity800
Power Dissipation231 W
Rds On Max1.4 mΩ
Resistance1.4 MΩ
Rise Time62 ns
Schedule B8541290080
Threshold Voltage2.2 V
Turn-Off Delay Time78 ns
Turn-On Delay Time18 ns
Dimensions
Height5.084 mm