Infineon IRFS7434PBF

Name: Infineon IRFS7434PBF
Brand: Infineon
SKU: IRFS7434PBF

40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS

$ 1.45

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRFS7434PBF	100					1.620	1.450	1.370	11h
RS (Formerly Allied Electronics)		IRFS7434PBF	0	3200	Bulk					9.030	1d
Farnell		IRFS7434PBF	0	1		0.939*	0.939*	0.939*	0.939*	0.939*	11h
Win Source		WS-IRFS7434PBF	7,320	20				2.022	1.696	1.696	12h
Worldway Electronics		IRFS7434PBF	8,045	7	Tube		1.537	1.508	1.450	1.421	11h

数据表和文档

下载 Infineon IRFS7434PBF 的数据表和制造商文档。

IHS

Datasheet12 页11 年前

Datasheet13 页11 年前

Newark

库存历史记录

3 个月趋势:

+0.00%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-09-17

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

描述

由其分销商提供的 Infineon IRFS7434PBF 的描述。

40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS

Infineon SCT

294W(Tc) 20V 3.9V@ 250¦ÌA 324nC@ 10 V 1N 40V 1.6m¦¸@ 100A,10V 195A 10.82nF@25V D2PAK

Unikeyic (ICkey)

Power Field-Effect Transistor, 195A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

Infineon

MOSFET, N-CH, 40V, 195A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.00125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V

Farnell