供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-10-25
LTD Date2015-04-25
相关零件
STMicroelectronicsSTB30NF20L
MOSFET N CH 200V 30A D2PAK / N-Channel 200 V 30A (Tc) 150W (Tc) Surface Mount D2PAK
描述
由其分销商提供的 Infineon IRFS5620TRLPBF 的描述。
Digital Audio 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R
AUDIO MOSFET, 200V, 24A, 78 MOHM, 25 NC QG, D2PAK
Power Field-Effect Transistor, 24A I(D), 200V, 0.0775ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N CH DIG AUDIO MOSFET, HEXFET, 200V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:200V; On Resistance Rds(on):63.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:144W ;RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)24 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance77.5 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time9.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.71 nF
Max Operating Temperature175 °C
Max Power Dissipation144 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation144 W
Rds On Max77.5 mΩ
Rise Time14.6 ns
Turn-Off Delay Time17.1 ns
Turn-On Delay Time8.6 ns