供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-04-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-15
LTD Date2023-04-15
相关零件
InfineonSPD03N50C3ATMA1
Trans MOSFET N-CH 500V 3.2A 3-Pin(2+Tab) DPAK T/R / Cool MOS Power Transistor
onsemiFQD6N50CTF
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
描述
由其分销商提供的 Infineon IRFR812TRPBF 的描述。
Single N-Channel 500 V 2.2 Ohm 135 nC HEXFET® Power Mosfet - TO-252AA
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
500V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 3.6A I(D), 500V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance2.2 Ω
Drain to Source Voltage (Vdss)500 V
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance810 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation78 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.2 Ω
Package Quantity2000
PackagingTape & Reel
Power Dissipation78 W
Rds On Max2.2 Ω
Resistance2.2 Ω
Rise Time22 ns
Turn-Off Delay Time24 ns
Turn-On Delay Time14 ns
Dimensions
Height2.52 mm