Infineon IRFR6215PBF

MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W

Single P-Channel 150 V 0.295 Ohm 66 nC HEXFET® Power Mosfet - TO-252AA

-150V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

MOSFET, P, -150V, 13A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:150V; On Resistance Rds(on):295mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-13A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:44A; SMD Marking:IRFR6215; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:-150V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V