Infineon IRFR4105PBF

Name: Infineon IRFR4105PBF
Brand: Infineon
SKU: IRFR4105PBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.045 Ohm; Id 27A; D-pak (TO-252AA); Pd 68W

$ 0.51

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRFR4105PBF	221					0.254	0.211	0.188	10h
RS (Formerly Allied Electronics)	IRFR4105PBF	0	1	Bulk	0.900	0.810	0.810	0.810	0.810	2h
Win Source	WS-IRFR4105PBF	18,830	140					0.297	0.285	11h
Worldway Electronics	IRFR4105PBF	11,755	7	Tube		0.541	0.531	0.510	0.500	10h
Fly-Wing Technology	IRFR4105PBF	71,779			0.510	0.419	0.406	0.380	0.380	9h

数据表和文档

下载 Infineon IRFR4105PBF 的数据表和制造商文档。

IHS

Datasheet12 页21 年前

Datasheet11 页21 年前

Newark

RS (Formerly Allied Electronics)

DigiKey

库存历史记录

3 个月趋势:

+0.00%

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-02-01

Lifecycle StatusObsolete (Last Updated: 5 months ago)

描述

由其分销商提供的 Infineon IRFR4105PBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.045Ohm;ID 27A;D-Pak (TO-252AA);PD 68W

RS (Formerly Allied Electronics)

Single N-Channel 55 V 0.045 Ohm 34 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

HEXFET Power MOSFET Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET, N, 55V, 25A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:55V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:46W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:27A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.7°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:46W; Power Dissipation Pd:46W; Pulse Current Idm:100A; SMD Marking:IRFR5104; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC