供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-07-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
相关零件
描述
由其分销商提供的 Infineon IRFR4104TRLPBF 的描述。
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 40V 119A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Package/Case:D-PAK; Power Dissipation, Pd:140W; Continuous Drain Current - 100 Deg C:84A; Continuous Drain Current - 25 Deg C:119A ;RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance5.5 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time36 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.95 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance5.5 mΩ
Package Quantity3000
Power Dissipation140 W
Rds On Max5.5 mΩ
Rise Time69 ns
Turn-Off Delay Time37 ns
Turn-On Delay Time17 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm