Infineon IRFR24N15DTRPBF

Name: Infineon IRFR24N15DTRPBF
Brand: Infineon
SKU: IRFR24N15DTRPBF

Single N-Channel 150 V 95 mOhm 45 nC HEXFET® Power Mosfet - TO-252-3

$ 0.639

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark	2	IRFR24N15DTRPBF	12	1	Cut Tape	2.050	1.270	0.883	0.792	0.792
Future Electronics	2	IRFR24N15DTRPBF	126,000	2K	Tape & Reel					0.515
Arrow Electronics	3	IRFR24N15DTRPBF	1,629	1		0.485	0.485	0.485	0.485	0.485
Rutronik		TMOSP12279	4,000	2K						0.380	11h
Rochester Electronics		IRFR24N15DTRPBF	231					0.681	0.565	0.504	3h

数据表和文档

下载 Infineon IRFR24N15DTRPBF 的数据表和制造商文档。

Newark

Datasheet11 页15 年前

Datasheet11 页21 年前

IHS

iiiC

库存历史记录

3 个月趋势:

-2.72%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-06-07

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRFR24N15DTRPBF 的描述。

Single N-Channel 150 V 95 mOhm 45 nC HEXFET® Power Mosfet - TO-252-3

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 150 V, 24 A, 0.082 ohm, TO-252AA, Surface Mount

Avnet

Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:24A; On Resistance, Rds(on):95mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon