Infineon IRFR15N20DTRPBF

Name: Infineon IRFR15N20DTRPBF
Brand: Infineon
SKU: IRFR15N20DTRPBF

IRFR15N20DPBF N-channel MOSFET Transistor; 17 A; 200 V; 3-Pin DPAK

$ 0.646

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价格与库存

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Distributor		SKU		Min	Pkg
Newark	2	IRFR15N20DTRPBF	1,277	1	Cut Tape	1.880	1.370	1.060	0.972	0.972
Rutronik		TMOSP12263	32,000	2K						0.541	11h
Rochester Electronics		IRFR15N20DTRPBF	121					0.681	0.565	0.504	4h
Arrow Electronics	3	IRFR15N20DTRPBF	4,300	1		0.953	0.767	0.663	0.600	0.498
DigiKey	3	IRFR15N20DTRPBFCT-ND	10,393	1	Cut Tape	2.420	1.541	1.039	0.754	0.754

数据表和文档

下载 Infineon IRFR15N20DTRPBF 的数据表和制造商文档。

TME

Datasheet11 页21 年前

IHS

iiiC

库存历史记录

3 个月趋势:

-6.56%

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA	封装		下载

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-07-26

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon IRFR15N20DTRPBF 的描述。

IRFR15N20DPBF N-channel MOSFET Transistor; 17 A; 200 V; 3-Pin DPAK

SHENGYU ELECTRONICS

Single N-Channel 200V 165 mOhm 27 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

MOSFET Operating temperature: -55...175 °C Housing type: TO-263 Polarity: N Variants: Enhancement mode Power dissipation: 140 W

Distrelec

HEXFET POWER MOSFET Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5.5V; Power Dissipation:140W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRFR15N20DTRPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon