Infineon IRFL4315PBF

Name: Infineon IRFL4315PBF
Brand: Infineon
SKU: IRFL4315PBF

MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 185 Milliohms; ID 2.6A; SOT-223; PD 2.8W; -55de

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFL4315PBF	0	1520	Bulk					0.750	1d
Farnell	IRFL4315PBF	0	5			0.594*	0.386*	0.364*	0.356*	7h
Win Source	WS-IRFL4315PBF	27,080	24				1.931	1.661	1.661	9h
Worldway Electronics	IRFL4315PBF	9,972	7	Tube		0.319	0.309	0.293	0.293	1d
Voyager Components	IRFL4315PBF-IR-1005	358			1.157	1.157	0.874	0.488	0.488	14h

数据表和文档

下载 Infineon IRFL4315PBF 的数据表和制造商文档。

IHS

Datasheet9 页15 年前

Datasheet8 页15 年前

Newark

element14 APAC

iiiC

RS (Formerly Allied Electronics)

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2002-06-14

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRFL4315PBF 的描述。

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 185 Milliohms;ID 2.6A;SOT-223;PD 2.8W;-55de

RS (Formerly Allied Electronics)

Single N-Channel 150 V 185 mOhm 12 nC HEXFET® Power Mosfet - SOT-223

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

Infineon SCT

Trans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223

Avnet

Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

IHS

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, N, 150V, 2.6A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:150V; On Resistance Rds(on):185mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:2.8W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:45°C/W; On State resistance @ Vgs = 10V:185ohm; Package / Case:SOT-223; Power Dissipation Pd:2.8W; Power Dissipation Pd:2.8W; Pulse Current Idm:21A; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

element14 APAC