供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-03-31
Lifecycle StatusObsolete (Last Updated: 5 months ago)
描述
由其分销商提供的 Infineon IRFL024N 的描述。
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A) | MOSFET N-CH 55V 2.8A SOT223
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:2.8A; On Resistance, Rds(on):75mohm; Rds(on) Test Voltage, Vgs:10V; Drain Source On Resistance @ 10V:75mohm RoHS Compliant: No
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-261-4
MountSurface Mount
Number of Terminals3
Technical
Continuous Drain Current (ID)2.8 A
Current Rating2.8 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)55 V
Input Capacitance400 pF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation2.1 W
Rds On Max75 mΩ
Rise Time13.4 ns
Voltage Rating (DC)55 V