供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-02-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-03-13
LTD Date2008-09-13
相关零件
InfineonIRFI4321PBF
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB FullPak package, TO-220-3 FP, RoHS
InfineonIRFI4228PBF
150V Single N-Channel PDP Switch HEXFET Power MOSFET in a TO-220AB Full-Pak package
描述
由其分销商提供的 Infineon IRFIB41N15DPBF 的描述。
150V Single N-Channel HEXFET Power MOSFET in a TO-220 Full-Pak(Iso), FULLPAK220-3, RoHS
Infineon SCT
Single N-Channel 150 V 45 mOhm 72 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220FP
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Dissipation:200W; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:3.14°C/W; Voltage, Vds Max:150V
N CH MOSFET, 150V, 41A, TO-220FP; Transi; N CH MOSFET, 150V, 41A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)41 A
Current Rating41 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.52 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation48 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Channels1
Number of Elements1
On-State Resistance45 mΩ
Package Quantity2000
PackagingBulk
Power Dissipation48 W
Rds On Max45 mΩ
Rise Time63 ns
Threshold Voltage5.5 V
Turn-Off Delay Time25 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)150 V
Dimensions
Height19.8 mm
Length10.6172 mm
Width4.826 mm