Infineon IRFI3205PBF

Name: Infineon IRFI3205PBF
Brand: Infineon
SKU: IRFI3205PBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.008Ohm; ID 64A; TO-220 Full-Pak; PD 63W; -55de

$ 1.32

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Newark		IRFI3205PBF	2,271	1		3.570	1.860	1.740	1.680	1.680
Arrow Electronics		IRFI3205PBF	1,048	1		1.574	1.574	1.574	1.574	1.574
Future Electronics	2	IRFI3205PBF	26,894	50	Tube			1.250	1.220	1.180
Rochester Electronics		IRFI3205PBF	6,522					1.560	1.290	1.150	8h
DigiKey		IRFI3205PBF-ND	3,994	1	Tube	3.790	3.790	1.729	1.307	1.150

数据表和文档

下载 Infineon IRFI3205PBF 的数据表和制造商文档。

Newark

Datasheet9 页9 年前

Datasheet8 页16 年前

Datasheet8 页28 年前

IHS

Factory Futures

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

-14.59%

CAD 模型

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-08-16

Lifecycle StatusObsolete (Last Updated: 2 days ago)

LTB Date2026-09-30

LTD Date2027-03-31

描述

由其分销商提供的 Infineon IRFI3205PBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 64A;TO-220 Full-Pak;PD 63W;-55de

RS (Formerly Allied Electronics)

Single N-Channel 55 V 0.008 Ohm 170 nC HEXFET® Power Mosfet - TO-220-3FP

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 55V 64A 3-Pin(3+Tab) TO-220 Full-Pack

Avnet

Power Field-Effect Transistor, 64A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, 55V, 56A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:63W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:64A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2kV; Junction to Case Thermal Resistance A:2.4°C/W; Package / Case:TO-220FP; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Pulse Current Idm:390A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon