Infineon IRFHM8337TRPBF

Name: Infineon IRFHM8337TRPBF
Brand: Infineon
SKU: IRFHM8337TRPBF

Single N-Channel 30 V 12.4 mOhm 5.4 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Farnell	2	IRFHM8337TRPBF	0	1	Cut Tape	0.160*	0.160*	0.160*	0.160*	0.160*	6h
Win Source		WS-IRFHM8337TRPBF	1,100	9			5.821	3.881	3.881	3.881	20h
Worldway Electronics		IRFHM8337TRPBF	12,289	7	Tape & Reel		0.042	0.040	0.038	0.038	2d
ICPartonline		IRFHM8337TRPBF	7,586			0.261	0.248	0.235	0.222	0.209	>1wk
RC Electronics		IRFHM8337TRPBF	88,498	1		0.165	0.150	0.150	0.130	0.130	4d

数据表和文档

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IHS

Datasheet11 页10 年前

Datasheet10 页11 年前

Newark

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-09-03

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2019-11-15

LTD Date2020-05-15

描述

由其分销商提供的 Infineon IRFHM8337TRPBF 的描述。

Single N-Channel 30 V 12.4 mOhm 5.4 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

Future Electronics

30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS

Infineon SCT

TAPE AND REEL / MOSFET, 30V,A, 12mOhm, 5nC, PQFN3.3x3.3 single

Newark

Trans MOSFET N-CH 30V 12A 8-Pin QFN EP T/R

Verical

HEXFET POWER MOSFET Power Field-Effect Transistor, 12A I(D), 30V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 5.0C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

Infineon