Infineon IRFH5104TR2PBF

Name: Infineon IRFH5104TR2PBF
Brand: Infineon
SKU: IRFH5104TR2PBF

40V Single N-Channel HEXFET Power MOSFET in a PQFN package

$ 1.445

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

非授权经销商

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Distributor	SKU		Min	Pkg
DigiKey	IRFH5104TR2PBFCT-ND	336	1	Cut Tape	3.220	2.091	1.445	1.445	1.445
Farnell	IRFH5104TR2PBF	0	1		2.225*	2.225*	1.222*	0.814*	0.814*	2h
Microchip USA	IRFH5104TR2PBF	389	600					1.072	1.072	3d
Component Stockers USA	IRFH5104TR2PBF	437			1.290	1.110	1.010	1.010	1.010	>1wk
Win Source	WS-IRFH5104TR2PBF	20	85				0.625	0.416	0.416	16h

数据表和文档

下载 Infineon IRFH5104TR2PBF 的数据表和制造商文档。

IHS

Datasheet10 页11 年前

Datasheet9 页11 年前

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+0.00%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-01-03

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2014-05-12

描述

由其分销商提供的 Infineon IRFH5104TR2PBF 的描述。

40V Single N-Channel HEXFET Power MOSFET in a PQFN package

International Rectifier

Trans MOSFET N-CH 40V 24A 8-Pin PQFN T/R

Verical

MOSFET N-Channel 40V 24A HEXFET PQFN8

RS (Formerly Allied Electronics)

3.6W(Ta),114W(Tc) 20V 4V@ 100¦ÌA 80nC@ 10 V 1N 40V 3.5m¦¸@ 50A,10V 24A,100A 3.12nF@25V QFN 5mm*6mm*810¦Ìm

UnikeyIC

Power Field-Effect Transistor, 24A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET [IR] IRFH5104TR2PBF MOSFET

Distrelec

MOSFET,N CH,40V,24A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:3.6W; Voltage Vgs Max:20V

element14 APAC