Infineon IRFH5015TRPBF

Name: Infineon IRFH5015TRPBF
Brand: Infineon
SKU: IRFH5015TRPBF

Single N-Channel 150 V 31 mOhm 54 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

$ 0.681

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制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IRFH5015TRPBF	3,948	1		0.652	0.652	0.652	0.652	0.652
Rutronik		TMOS2305	292,000	4K						0.639	22h
Rochester Electronics		IRFH5015TRPBF	410					0.747	0.620	0.552	14h
DigiKey	3	IRFH5015TRPBFCT-ND	4,142	1	Cut Tape	2.210	1.413	0.956	0.698	0.673
Newark	2	IRFH5015TRPBF	0	5	Cut Tape		1.410	0.949	0.701	0.701

数据表和文档

下载 Infineon IRFH5015TRPBF 的数据表和制造商文档。

IHS

Datasheet10 页10 年前

Datasheet9 页10 年前

Newark

库存历史记录

3 个月趋势:

-1.30%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装
SnapEDA		3D	下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-01-22

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IRFH5015TRPBF 的描述。

Single N-Channel 150 V 31 mOhm 54 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

Infineon SCT

Trans MOSFET N-CH 150V 10A 8-Pin PQFN EP T/R / MOSFET N-CH 150V 10A 8VQFN

Win Source

MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:150V; On Resistance Rds(on):31mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon