供应链
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
InfineonIRFH4210DTRPBF
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
InfineonIRFH4201TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
描述
由其分销商提供的 Infineon IRFH4210TRPBF 的描述。
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
Infineon SCT
MOSFET, N CH, 25V, 45A, PQFN-5, FULL REEL
Power Field-Effect Transistor
Benefits: Low RDSon (less than 1.10 mOhms); Low Thermal Resistance to PCB (less than 1.2C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1, Industrial Qualification; FastIRFET | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; MultiPhase SyncFET; Point of Load SyncFET
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
MountSurface Mount
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.1 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.812 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.1 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.6 W
Rds On Max1.35 mΩ
Resistance1.1 MΩ
Rise Time44 ns
Threshold Voltage1.6 V
Turn-Off Delay Time24 ns
Turn-On Delay Time20 ns
Dimensions
Height950 µm
Length6 mm
Width5 mm