供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-08-05
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2014-01-09
LTD Date2014-07-09
描述
由其分销商提供的 Infineon IRF9540NS 的描述。
Trans MOSFET P-CH 100V 23A 3-Pin(2+Tab) D2PAK
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-23A; On Resistance, Rds(on):117mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2-PAK ;RoHS Compliant: No
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)23 A
Current Rating-23 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance117 mΩ
Drain to Source Voltage (Vdss)-100 V
Fall Time51 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
PackagingBulk
Power Dissipation94 W
Rise Time67 ns
TerminationSMD/SMT
Threshold Voltage-4 V
Turn-Off Delay Time51 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-100 V