Infineon IRF9520NPBF

Name: Infineon IRF9520NPBF
Brand: Infineon
SKU: IRF9520NPBF

Mosfet, Power; P-ch; Vdss -100V; Rds(on) 0.48 Ohm; Id -6.8A; TO-220AB; Pd 48W; Vgs +/-20

$ 0.92

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF9520NPBF	0	700	Bulk				0.920	0.920	22h
Farnell		IRF9520NPBF	0	1		1.540*	1.297*	0.942*	0.574*	0.574*	6h
Microchip USA		IRF9520NPBF	229	3500	Tube					0.400	23h
Weyland Electronics Group Pte. Ltd.		IRF9520NPBF	2,800	1	Tape & Reel	10.517	10.517	10.517	10.517	10.517	7h
Win Source	2	WS-IRF9520N	2,800	3			16.194	13.582	13.582	13.582	7h

数据表和文档

下载 Infineon IRF9520NPBF 的数据表和制造商文档。

IHS

Datasheet10 页21 年前

Datasheet9 页21 年前

Newark

RS (Formerly Allied Electronics)

Jameco

iiiC

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-10-30

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-10-15

LTD Date2023-04-15

描述

由其分销商提供的 Infineon IRF9520NPBF 的描述。

MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.48Ohm;ID -6.8A;TO-220AB;PD 48W;VGS +/-20

RS (Formerly Allied Electronics)

INFINEON IRF9520NPBF MOSFET Transistor, P Channel, 6.8 A, -100 V, 480 mohm, -10 V, -4 V

Utmel Electronic

Single P-Channel 100 V 0.48 Ohm 27 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, PG-TO220-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):480mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:48W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-6.8A; Current Temperature:25°C; Device Marking:IRF9520N; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:27A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -6.8 / Drain-Source Voltage (Vds) V = -100 / ON Resistance (Rds(on)) mOhm = 480 / Gate-Source Voltage V = 20 / Fall Time ns = 31 / Rise Time ns = 47 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48

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