Infineon IRF7910TRPBF

Name: Infineon IRF7910TRPBF
Brand: Infineon
SKU: IRF7910TRPBF

MOSFET, Power; Dual N-Ch; VDSS 12V; RDS(ON) 11.5 Milliohms; ID 10A; SO-8; PD 2W; -55deg

$ 0.636

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRF7910TRPBF	1					0.640	0.531	0.474	19h
RS (Formerly Allied Electronics)		IRF7910TRPBF	0	10	Bulk		0.820	0.740	0.740	0.740	8h
Farnell	2	IRF7910TRPBF	0	1	Cut Tape	1.178*	1.138*	1.138*	1.138*	1.138*	19h
HQonline		DS0102654	5	1		0.533	0.533	0.533	0.533	0.533	>1w
Win Source		WS-IRF7910TRPBF	17,480	95				0.534	0.416	0.416	20h

数据表和文档

下载 Infineon IRF7910TRPBF 的数据表和制造商文档。

IHS

Datasheet8 页17 年前

_legacy Avnet

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

-14.29%

CAD 模型

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来源	eCAD	mCAD	文件
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供应链

Export Control Classification Number (ECCN) CodeEAR99

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF7910TRPBF 的描述。

MOSFET, Power;Dual N-Ch;VDSS 12V;RDS(ON) 11.5 Milliohms;ID 10A;SO-8;PD 2W;-55deg

RS (Formerly Allied Electronics)

Single N-Channel 12 V 15 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Transistor MOSFET Array Dual N-CH 12V 10A 8-Pin SOIC T/R

Avnet

Small Signal Field-Effect Transistor, 10A I(D), 12V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:12V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:4.5V; Leaded Process Compatible:Yes RoHS Compliant: Yes

Newark