Infineon IRF7470PBF

Name: Infineon IRF7470PBF
Brand: Infineon
SKU: IRF7470PBF

Mosfet, Power; N-ch; Vdss 40V; Rds(on) 9 Milliohms; Id 10A; SO-8; Pd 2.5W; Vgs +/-12V

$ 0.93

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF7470PBF	0	5	Bulk		1.060	0.930	0.930	0.930	23h
Farnell	2	IRF7470PBF..	0	1		2.005*	2.005*	1.050*	0.902*	0.902*	10h
Weyland Electronics Group Pte. Ltd.		IRF7470PBF	410	1	Tape & Reel	0.751	0.751	0.751	0.751	0.751	16h
Win Source		WS-IRF7470PBF	11,180	13				3.213	3.213	3.213	11h
Worldway Electronics		IRF7470PBF	16,834	7	Tube		0.986	0.967	0.930	0.911	10h

数据表和文档

下载 Infineon IRF7470PBF 的数据表和制造商文档。

IHS

Datasheet9 页21 年前

Datasheet8 页21 年前

Farnell

element14 APAC

RS (Formerly Allied Electronics)

Jameco

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-04-18

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRF7470PBF 的描述。

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 9 Milliohms;ID 10A;SO-8;PD 2.5W;VGS +/-12V

RS (Formerly Allied Electronics)

Transistor MOSFET N Channel 40 Volt 10.6 Amp 8 Pin SOIC

Jameco

Single N-Channel 40 V 13 mOhm 44 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

SMPS HEXFET POWER MOSFET Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET N, LOGIC SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipatio

Farnell

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:40V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10A; External Length / Height:1.75mm; External Width:4.05mm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:85A; Row Pitch:6.3mm; SMD Marking:F7470; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:10V

element14 APAC