Infineon IRF7104TRPBF

Name: Infineon IRF7104TRPBF
Brand: Infineon
SKU: IRF7104TRPBF

Mosfet, Power; Dual P-ch; Vdss -20V; Rds(on) 0.25 Ohm; Id -2.3A; SO-8; Pd 2W; Vgs +/-12V

$ 0.483

NRND

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	42Y0394	8	1		1.470	0.850	0.626	0.577	0.577	9h
Newark		IRF7104TRPBF	246	1	Cut Tape	1.510	0.847	0.627	0.545	0.545
Arrow Electronics	2	IRF7104TRPBF	2,686	1		1.173	1.173	1.173	1.173	1.173
DigiKey	2	IRF7104PBFCT-ND	2,495	1	Cut Tape	1.420	0.896	0.592	0.420	0.385
Future Electronics	2	IRF7104TRPBF	0	4K	Tape & Reel					0.295

数据表和文档

下载 Infineon IRF7104TRPBF 的数据表和制造商文档。

IHS

Datasheet9 页21 年前

Farnell

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

+18.87%

CAD 模型

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供应链

Lifecycle StatusNRND (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon IRF7104TRPBF 的描述。

MOSFET, Power;Dual P-Ch;VDSS -20V;RDS(ON) 0.25Ohm;ID -2.3A;SO-8;PD 2W;VGS +/-12V

RS (Formerly Allied Electronics)

Dual P-Channel 20V 0.25 Ohm 9.3 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Trans MOSFET P-CH Si 20V 2.3A 8-Pin SOIC T/R / MOSFET 2P-CH 20V 2.3A 8-SOIC

Win Source

MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-2.3A; On Resistance, Rds(on):400mohm; Rds(on) Test Voltage, Vgs:12V; Package/Case:8-SO; Power Dissipation, Pd:2W ;RoHS Compliant: Yes

Newark

Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = -2.3 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 250 / Gate-Source Voltage V = 12 / Fall Time ns = 30 / Rise Time ns = 16 / Turn-OFF Delay Time ns = 42 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2

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