供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-03-21
Lifecycle StatusProduction (Last Updated: 4 weeks ago)
LTB Date2019-11-15
LTD Date2020-05-15
相关零件
InfineonIRFHM4234TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
描述
由其分销商提供的 Infineon IRF6802SDTRPBF 的描述。
Dual N-Channel 25 V 4.2 mOhm 13 nC HEXFET® Power Mosfet - DirectFET®
Trans MOSFET Array Dual N-CH 25V 16A 8-Pin Direct-FET SA T/R 4.8k
IRF6802 12V-300V N-CHANNEL POWER MOSFET;
MOSFET 2N-CH 25V 16A DIRECTFET
A 25V Dual N-Channel HEXFET Power MOSFET in a DirectFET SA package rated at 16 amperes optimized with low on resistance., MG-WDSON-6, RoHS
Infineon SCT
25V DUAL CONTROL FET IN S- CAN
Benefits: RoHS Compliant; 100% Rg tested; Dual N-Channel MOSFET; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: Battery Protection
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)57 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance3.2 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time23 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.35 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation21 W
Min Operating Temperature-40 °C
On-State Resistance4.2 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation1.7 W
Rds On Max4.2 mΩ
Rise Time50 ns
Turn-Off Delay Time13 ns
Turn-On Delay Time9.7 ns