Infineon IRF6718L2TR1PBF

Name: Infineon IRF6718L2TR1PBF
Brand: Infineon
SKU: IRF6718L2TR1PBF

Trans MOSFET N-CH 25V 61A 13-Pin Direct-FET L6 T/R

$ 4.79

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF6718L2TR1PBF	0	1K	Bulk				4.790	4.790	11h
Farnell	2	IRF6718L2TR1PBF	0	1	Cut Tape	2.559*	2.559*	2.383*	2.329*	2.329*	17h
Worldway Electronics		IRF6718L2TR1PBF	15,446	7	Tape & Reel		1.636	1.586	1.502	1.502	20h
Quest		IRF6718L2TR1PBF	87			10.778	5.389	4.670	4.670	4.670	17h
QUARKTWIN TECHNOLOGY LTD		IRF6718L2TR1PBF	联系方式								>1wk

数据表和文档

下载 Infineon IRF6718L2TR1PBF 的数据表和制造商文档。

IHS

Datasheet11 页14 年前

Datasheet10 页14 年前

element14 APAC

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EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-06-26

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2014-06-20

LTD Date2014-12-20

描述

由其分销商提供的 Infineon IRF6718L2TR1PBF 的描述。

Trans MOSFET N-CH 25V 61A 13-Pin Direct-FET L6 T/R

Verical

MOSFET Operating temperature: -40...150 °C Housing type: DirectFET Polarity: N Power dissipation: 4.3 W

Distrelec

A 25V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET L2 PACKAGE RATED AT 61 | Infineon IRF6718L2TR1PBF

RS (Formerly Allied Electronics)

MOSFET N-CH 25V 61A DIRECTFET L6

DigiKey

Power Field-Effect Transistor, 61A I(D), 25V, 0.0007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 61 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

International Rectifier

MOSFET, N CH, 25V, 61A, DIRECTFET L2; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:25V; On Resistance Rds(on):500µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:4.3W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; SVHC:No SVHC (20-Jun-2011); Current Id Max:61A; Package / Case:L6; Power Dissipation Pd:4.3W; Power Dissipation Pd:4.3W; Pulse Current Idm:490A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V

element14 APAC